1/10 september 2004 new datasheet according to pcn dsg-tra/04/532 STD5N20L n-channel 200v - 0.65 ? - 5a dpak stripfet? mosfet table 1: general features typical r ds (on) = 0.65 ? @ 5v conduction losses reduced low input capaciatnce low threshold device description the STD5N20L utilizes the latest advanced de- sign rules of st?s proprietary stripfet? technol- ogy. this is suitable for the most demanding dc motor control and lighting application. applications ups and motor control lighting table 2: order codes figure 1: package figure 2: internal schematic diagram type v dss r ds(on) i d pw STD5N20L 200 v < 0.7 ? 5 a 33 w 1 3 dpak sales type marking package packaging STD5N20Lt4 d5n20l dpak tape & reel rev. 3
STD5N20L 2/10 table 3: absolute maximum ratings ( ) pulse width limited by safe operating area table 4: thermal data electrical characteristics (t case =25 c unless otherwise specified) table 5: on/off symbol parameter value unit v ds drain-source voltage (v gs = 0) 200 v v dgr drain-gate voltage (r gs = 20 k ? ) 200 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25 c 5a i d drain current (continuous) at t c = 100 c 3.6 a i dm ( ) drain current (pulsed) 20 a p tot total dissipation at t c = 25 c 33 w derating factor 0.27 w/ c t stg storage temperature ? 55 to 150 c t j operating junction temperature rthj-case thermal resistance junction-case max 3.75 c/w rthj-amb thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 275 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 200 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 50a 12.5v r ds(on) static drain-source on resistance v gs = 5 v, i d = 2.5 a 0.65 0.7 ?
3/10 STD5N20L table 6: dynamic table 7: source drain diode (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) starting t j =25 c, i d = 5 a, v dd = 50 v (*) pulse width limited by safe operating area symbol parameter test conditions min. typ. max. unit g fs (2) forward transconductance v ds = 15 v, i d = 5 a 6.5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 242 44 6 pf pf pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 100 v, i d = 2.5 a r g = 4.7 ?, v gs = 5v (resistive load see figure 14) 11. 5 21.5 14 15.5 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 160 v, i d = 5 a, v gs = 5v 5 1.5 3 6nc nc nc symbol parameter test conditions min. typ. max. unit i sd source-drain current 5 a i sdm (*) source-drain current (pulsed) 20 a v sd (1) forward on voltage i sd = 5 a, v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s, v dd = 100 v, t j = 25 c (see test circuit, see figure 15) 93 237 5.1 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5 a, di/dt = 100 a/s, v dd = 100 v, t j = 150 c (see test circuit, see figure 15) 97 286 5.9 ns nc a
STD5N20L 4/10 figure 3: safe operating area figure 4: output characteristics figure 5: transconductance figure 6: thermal impedance figure 7: transfer characteristics figure 8: static drain-source on resistance
5/10 STD5N20L figure 9: gate charge vs gate-source voltage figure 10: normalized gate thereshold volt- age vs temperature figure 11: source-drain diode forward char- acteristics figure 12: capacitance variations figure 13: normalized on resistance vs tem- perature
STD5N20L 6/10 figure 14: switching times test circuit for resistive load figure 15: test circuit for inductive load switching and diode recovery times figure 16: gate charge test circuit
7/10 STD5N20L dim. mm inch min. typ. max. min. typ. max. a 2.20 2.40 0.087 0.094 a1 0.90 1.10 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.213 c 0.45 0.60 0.018 0.024 c2 0.48 0.60 0.019 0.024 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.252 0.260 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.398 l2 0.8 0.031 l4 0.60 1.00 0.024 0.039 v2 0 o 8 o 0 o 0 o p032p_b to-252 (dpak) mechanical data
STD5N20L 8/10 tape and reel shipment (suffix ?t4?)* tube shipment (no suffix)* dpak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters all dimensions are in millimeters
9/10 STD5N20L table 8: revision history date revision description of changes 08-june-2004 2 new stylesheet. datasheet according to pcn dsg-tra/04/532 20-sep-2004 3 changes on table 3, and on figure 3.
STD5N20L 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america
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